发明名称 高利得ワイドバンドギャップ・ダーリントン・トランジスタ及び関連する製造方法
摘要 A packaged power electronic device includes a wide bandgap bipolar driver transistor having a base, a collector, and an emitter terminal, and a wide bandgap bipolar output transistor having a base, a collector, and an emitter terminal. The collector terminal of the output transistor is coupled to the collector terminal of the driver transistor, and the base terminal of the output transistor is coupled to the emitter terminal of the driver transistor to provide a Darlington pair. An area of the output transistor is at least 3 times greater than an area of the driver transistor in plan view. For example, an area ratio of the output transistor to the driver transistor may be between about 3:1 to about 5:1. Related devices and methods of fabrication are also discussed.
申请公布号 JP5727475(B2) 申请公布日期 2015.06.03
申请号 JP20120520767 申请日期 2010.07.15
申请人 クリー インコーポレイテッドCREE INC. 发明人 ザン キンチュン;アガワル アナント ケイ
分类号 H01L21/8222;H01L21/331;H01L27/082;H01L29/732 主分类号 H01L21/8222
代理机构 代理人
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