| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing heat generation over a wide area. <P>SOLUTION: A semiconductor device 100 comprises: a substrate 10; a plurality of gate electrodes 30 provided in parallel on the substrate 10; source electrodes 40 and drain electrodes 50 that are alternately provided between the plurality of gate electrodes 30; and a plurality of active regions 60 and inactive regions 62 that are alternately formed under the gate electrodes 30 along a first direction, that is, a longitudinal direction of the gate electrodes 30. The sum of the lengths of the inactive regions 62 formed along each of the gate electrodes 30 in the first direction becomes larger toward the inside from the outside. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
