发明名称 容量素子および半導体装置
摘要 <p><P>PROBLEM TO BE SOLVED: To improve the Q-value (Quality Factor) characteristic of a capacitive element. <P>SOLUTION: A capacitive element includes: a pair of electrodes EL10 and EL20 facing each other; a first terminal portion TE10 provided for one of the pair of electrodes and disposed at a distance from both ends of the one electrode; and a second terminal portion TE20 provided for the other of the pair of electrodes and disposed at a distance from both ends of the other electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5726609(B2) 申请公布日期 2015.06.03
申请号 JP20110090906 申请日期 2011.04.15
申请人 发明人
分类号 H01L21/822;H01L21/3205;H01L21/768;H01L23/522;H01L27/04 主分类号 H01L21/822
代理机构 代理人
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