| 摘要 |
909,921. Semi-conductor devices; glassmetal seals. SIEMENS-SCHUCKERTWERKE A.G. Feb. 20, 1959 [Feb. 21, 1958], No. 5974/59. Classes 36 and 37. A semi-conductor device is enclosed, apart from its external electrical connecting members, in an envelope made by embedding the device in a mass of glass particles and sintering to bond them together. A silicon PN junction diode is made by mounting the component parts of the diode on a molybdenum rod 3 in the lower half of a graphite mould 1. The component parts consist of an aluminium foil 4, silicon wafer 5, antimony-doped gold foil 6, tungsten block 7, and a connecting member 8 of molybdenum. To effect good sealing of conductors 3, 8 in the sintered glass the conductors are glazed at 15, 16 over a pre-oxidized surface which facilitates adhesion of the glaze. A ceramic sleeve 7 is placed on the wafer surrounding the conductor 8 and the mould then filled with glass granules and closed by graphite member 2. The assembly is heated by high-frequency induction in vacuum or a protective gas atmosphere to alloy the components of the diode together and sinter the glass into a unitary envelope. The thermal expansion coefficient of the external electrical connecting members should match that of the sintered glass. For instance, where, as in the above device the members are of molybdenum or of " KOVAR " (Trade Mark) borosilicate glass is used. If, on the other hand the members are of chromium-iron alloys or copperclad iron-nickel alloys alkali silicate or lead glasses are suitable. One of the members may be made rigid and be formed with an internal or external thread to facilitate mounting to facilitate mounting on a chassis. It may also form a support for cooling fins. In an alternative arrangement shown in Fig. 3, the ceramic cylinder is replaced by a hollow conical member 10a, which co-operates with conductor 13 to prevent the glass granules from coming into contact with the operative parts of the diode during the sintering process. |
