| 摘要 |
A wafer level semiconductor device and manufacturing method including providing a semiconductor device wafer substitute having a backside, applying to the backside a conductive metallization layer, and applying to the backside over the conductive metallization layer a protective metal layer of titanium, titanium alloys, nickel, nickel alloys, chromium, chromium alloys, cobalt, cobalt alloys, palladium, and palladium alloys. |
