发明名称 |
Electroplated silver alloy bump for a semiconductor structure |
摘要 |
<p>A semiconductor structure includes a semiconductor device (100), a conductive pad (102) on the semiconductor device (100), and a Ag 1-x Y x alloy bump (101) over the conductive pad (102). The Y of the Ag 1-x Y x bump (101) comprises metals forming complete solid solution with Ag at arbitrary weight percentage (Au and/or Pd), and the x of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.005 to about 0.25. A difference between standard deviation and mean value of a grain size distribution of the Ag 1-x Y x alloy bump (101) is in a range of from about 0.2 µm to about 0.4 µm. An average grain size of the Ag 1-x Y x alloy bump (101) on a longitudinal cross sectional plane is in a range of from about 0.5 µm to about 1.5 µm. The alloy bump (101) is formed by electroplating.</p> |
申请公布号 |
EP2879173(A2) |
申请公布日期 |
2015.06.03 |
申请号 |
EP20130194235 |
申请日期 |
2013.11.25 |
申请人 |
CHIPMOS TECHNOLOGIES INC. |
发明人 |
CHENG, SHIH JYE;LU, TUNG BAO |
分类号 |
H01L23/485;C25D3/48;C25D3/64;H01L21/60 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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