| 摘要 |
Provided is a method for forming a metal film capable of forming a metal film with low impurities with high throughput by CVD. An object substrate is arranged in a process chamber. A ligand which has nitrogen-carbon combination in molecule structure, is formed on the object substrate. A metal containing compound gas which has a structure where the nitrogen of the ligand coordinates with a metal and ammonia as a reducing gas are supplied. An initial metal film is formed by CVD. After that, a hydriding process is performed on the object substrate by supplying hydrogen into the process chamber. After that, an atmosphere including ammonia is formed in the process chamber. After that, a main metal film is formed by CVD, by supplying the metal containing compound gas and hydrogen gas as a reducing gas when the initial metal film is formed, onto the initial metal film formed on the object substrate. |
