| 摘要 |
A semiconductor device configured to provide high heat dissipation and improved breakdown voltage comprises a substrate, a buried oxide layer on the substrate, a buried n+ region in the substrate below the buried oxide layer, and an epitaxial layer on the buried oxide layer. The epitaxial layer comprises a p-well, an n-well, and a drift region between the p-well and the n-well. The semiconductor device also comprises a source contact, a first electrode electrically connecting the source contact to the p-well, and a gate on a portion of the p-well and a portion of the drift region. The semiconductor device further comprises a drain contact, and a second electrode extending from the drain contact through the n-well and through the buried oxide layer to the buried n+ region. The second electrode electrically connects the drain contact to the n-well and to the buried n+ region. |
