| 摘要 |
Disclosed is a transistor (100, 200, 300) having a first region (120, 320) of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second region (140, 340) of the first conductivity type having a portion (142, 342) including a contact terminal (145, 345) for draining said charge carriers from the transistor, wherein the first region is separated from the second region by an intermediate region (130, 330) of a second conductivity type defining a first p-n junction with the first region and a second p-n junction with the second region, wherein the laterally extended region separates the portion from the second p-n junction, and wherein the transistor further comprises a substrate (110) having a doped region (112) of the second conductivity type, said doped region being in contact with and extending along the laterally extended second region and a further contact terminal (115) connected to the doped region for draining minority charge carriers from the laterally extended second region. An amplifier circuit and IC including such transistors are also disclosed. |
