| 摘要 |
<p>Embodiments of the present invention provide a method for processing data, a flash memory, and a terminal, and relate to the field of electronic technologies. The flash memory includes a control circuit and a plurality of memory cells, where the memory cell is a floating-gate metal-oxide-semiconductor MOS transistor, and the floating-gate MOS transistor includes a source, a gate, a drain, and a substrate; the control circuit is configured to output a control signal to separately connect to the source, the gate, the drain, and the substrate, so as to implement a bitwise overwrite operation on the memory cell; and the control circuit is further configured to generate a control signal when data stored by any one of the memory cells is 0, so that the memory cell overwrites the data stored by the memory cell from 0 to 1 according to the control signal, where the control signal includes that the substrate of the memory cell is grounded, the source is connected to a negative programming voltage VPP, the drain is connected to the negative VPP, and the gate is connected to the negative VPP. The present invention improves the operating efficiency and extends a service life of a Flash.</p> |
