| 摘要 |
<p>The present invention relates to an apparatus and method for manufacturing a semiconductor light-emitting device using a neutral particle beam. According to the present invention, since the kinetic energy of the neutral particle beam is provided as a portion of the reaction energy for causing a nitride semiconductor single crystal thin film to be formed on a substrate, and the reaction energy is not provided as heat energy by heating a substrate as in the prior art, the substrate may be treated at a relatively low temperature. Furthermore, elements such as Si, Mg, and the like, which are solid elements required for doping are sprayed onto the substrate from a source which generates solid elements for doping together with the neutral particle beam to achieve high doping efficiency at a lower temperature. According to the present invention, since the substrate is treated at a low temperature, the degradation of the substrate and thin film may be prevented, and the undesired diffusion of the doping elements may be prevented to enable the manufacture of the semiconductor light-emitting device having superior light-emitting properties in a relatively easy manner.</p> |
