发明名称 |
THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE |
摘要 |
There is provided a thin film transistor, comprising a substrate (1) and a gate layer (3), a gate insulating layer (4), an active layer (5), an electrode metal layer (8) and a passivation layer (9) which are formed on the substrate (1) in sequence; the electrode metal layer (8) comprises a source electrode (8a) and a drain electrode (8b), which are separated from each other with a channel region being defined therebetween; between the gate layer (3) and the substrate (1), there is formed a first transparent conductive layer (2); between the active layer (5) and the electrode metal layer (8), there is formed a second transparent conductive layer (7). The transparent conductive layers (2, 7) are added so that adhesive force between the gate metal layer (3) and the substrate (1) is enhanced, diffusion of the electrode metal to the active layer (5) is prevented. |
申请公布号 |
EP2879187(A1) |
申请公布日期 |
2015.06.03 |
申请号 |
EP20120867720 |
申请日期 |
2012.11.08 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
ZHANG, XUEHUI;LIU, XIANG;XUE, JIANSHE |
分类号 |
H01L29/786;H01L21/336;H01L27/12;H01L29/45;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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