| 摘要 |
<p>The present invention relates to an oxide thin film transistor. The oxide thin film transistor according to the present invention includes an oxide semiconductor layer which is formed on a substrate and includes a first oxide layer of a lower side and a second oxide layer of an upper side, a gate insulation layer which is formed on the upper side of the oxide semiconductor layer, a gate electrode which is formed on the upper side of the gate insulation layer, an interlayer dielectric layer which is formed on the upper side of the gate electrode and includes first and second semiconductor contact holes, and source and drain electrodes which are in contact with the second oxide layer exposed through the first and second semiconductor contact holes. The reflectivity of the first oxide layer is higher than the reflectivity of the second oxide layer.</p> |
