CMP SLURRY COMPOSITION HAVING AUTOMATIC POLISHING STOP FUNCTION

摘要

The present invention relates to a CMP slurry composition having an automatic polishing stop function, which maintains positive zeta potential when mixing an additive composition and a slurry composition, has high polishing selectivity since a step removing rate is rapid in an oxide film when polishing a double membrane, and can implement the automatic polishing stop function and polishing flatness since a polishing rate slows down when a nitride layer is exposed after removing step.