| 摘要 |
An inductively coupled plasma processing apparatus performs plasma processing on a substrate by generating an inductively coupled plasma in a plasma generation region in a processing chamber. The apparatus includes a high frequency antenna for generating the inductively coupled plasma in the plasma generation region and a metal window provided between the plasma generation region and the high frequency antenna. The metal window is firstly divided into two or more sections electrically insulated from each other by a line along a peripheral direction of the metal window and then secondly divided into sections electrically insulated from each other by lines along directions crossing with the peripheral direction. |
