| 摘要 |
849,447. Semi-conductor devices. SIEMENS & HALSKE A. G. March 22, 1957 [March 23, 1956], No. 9555/57. Class 37 A semi-conductor device comprises a plurality of electrodes produced by alloying sets of wires to the surface of the crystal each set comprising a plurality of wires coated with the same material, the material of at least one set differing from that of the other set(s). Fig. 1 shows a molybdenum wire 3 coated with gold and antimony and a molybdenum wire 4 coated with indium wound around two spaced conducting rods 1 and 2. Fig. 2 shows the assembly after these wires have been alloyed to the surface of an N-type germanium or silicon crystal 5, the wires being cut so that rod 2 and wires 3 constitute an emitter electrode and rod I and wires 4 the base electrode. The collector electrode may be produced on the same or opposite surface of the crystal by the same process to form a transistor. A hook collector or drift transistor may be provided by using donor and acceptor materials with different diffusion coefficients and concentrations. Tungsten wires, and silver coatings may be used for the electrodes, and the alloying process may be applied simultaneously to a plurality of crystals placed between the wires. |
