| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a gate insulating material having high durability, high mobility and a high on-off ratio, and allowing a low turn-on voltage and low hysteresis, and to provide a gate insulating film and a field effect transistor using the gate insulating film. <P>SOLUTION: The gate insulating material contains a polymer and a metal compound. The metal compound contains an aluminum compound, and one or more compounds among a magnesium compound, a zinc compound, a copper compound, an indium compound, a lanthanum compound, a manganese compound, a calcium compound, a tin compound, a titanium compound, a zirconium compound and a hafnium compound. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
