发明名称 Method for producing EUV masks minimising the impact of substrate defects
摘要 The method involves generating blank masks having defects (D), and performing mapping of individual positions of defects of each mask by using an inspection machine. A set of concatenated mapping defects is established, and a set of mask positions is identified by mapping different mask blank defects. An electronic version of drawings of the masks is produced by taking all drawing rules into account locally so as to prohibit placing of critical components in defect zones (ZD). An unspecified white mask is produced along with a respective product design.
申请公布号 EP2701005(A3) 申请公布日期 2015.06.03
申请号 EP20130179132 申请日期 2013.08.02
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 VANNUFFEL, CYRIL;IMBERT, JEAN-LOUIS
分类号 G03F1/00 主分类号 G03F1/00
代理机构 代理人
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