Contact and via interconnects using metal around dielectric pillars

摘要

An integrated circuit containing a vertical interconnect that includes a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure. An upper conductive structure contacts a top surface of the vertical interconnect. A process of forming an integrated circuit that includes forming a vertical interconnect that has a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure, and an upper conductive structure contacts a top surface of the vertical interconnect.

主权项

1. A process of forming an integrated circuit, comprising the steps of:
forming a lower conductive structure in a lower region; forming an interlevel dielectric layer on a top surface of said lower region forming a vertical interconnect by a process further including the steps of:
forming at least one dielectric pillar on a top surface of said lower conductive structure;forming a trench within said interlevel dielectric layer for an upper lateral interconnect;forming a region of interconnect metal, such that said interconnect metal continuously surrounds each said at least one dielectric pillar, every location in said interconnect metal region is within a desired maximum horizontal distance from a boundary of said interconnect metal, and said interconnect metal electrically contacts said lower conductive structure, said boundary includes edges of said interconnect metal region and perimeters of said pillars, wherein a bottom plane of said upper lateral interconnect trench and a top surface of each said at least one dielectric pillar are substantially coplanar; and forming an upper conductive structure within said upper lateral interconnect trench, said upper conductive structure contacting a top surface of said vertical interconnect.