| 发明名称 | Method for producing a metal structure in a semiconductor substrate | ||
| 摘要 | A method for producing a metal structure in a semiconductor substrate includes: producing an opening in the rear side of the semiconductor substrate in the area of the metal structure to be produced, which extends to the front side layer structure; filling the opening at least partially with a metal so that a metal structure is created which extends from the rear side of the semiconductor substrate to the front side layer structure; masking the rear side of the semiconductor substrate for a trench process for exposing the metal structure in such a way that the trench mask includes a lattice structure in an area adjacent to the metal structure; producing an isolation trench adjacent to the metal structure, the metal structure acting as a lateral etch stop and the lattice structure being laterally undercut in the trench mask; and applying a sealing layer to the mask. | ||
| 申请公布号 | US9048247(B2) | 申请公布日期 | 2015.06.02 |
| 申请号 | US201414306164 | 申请日期 | 2014.06.16 |
| 申请人 | ROBERT BOSCH GMBH | 发明人 | Weber Heribert |
| 分类号 | H01L21/20;H01L21/44;H01L49/02 | 主分类号 | H01L21/20 |
| 代理机构 | Kenyon & Kenyon LLP | 代理人 | Kenyon & Kenyon LLP |
| 主权项 | 1. A method for producing at least one metal structure in a semiconductor substrate having a front side provided with a front side layer structure, comprising: producing at least one opening, which extends at least to the front side layer structure, in a rear side of the semiconductor substrate in an area corresponding to a location of the metal structure; filling the at least one opening at least partially with at least one metal to create a metal structure which extends from the rear side of the semiconductor substrate at least to the front side layer structure; masking the rear side of the semiconductor substrate for a trench process for exposing the metal structure, wherein the trench mask includes a lattice structure in an area adjacent to the metal structure; producing an isolation trench adjacent to the metal structure, wherein the metal structure acts as a lateral etch stop and the lattice structure in the trench mask is laterally undercut; and applying at least one sealing layer to the trench mask so that the isolation trench below the lattice structure is closed off as a cavity. | ||
| 地址 | Stuttgart DE | ||