Semiconductor device with buried gates and method for fabricating the same

摘要

A semiconductor device includes a supplementary layer and a silicon layer stacked over a substrate, a trench penetrating the supplementary layer and the silicon layer and formed over the substrate, a gate insulation layer formed along a surface of the trench, and a buried gate formed over the gate insulation layer and filling a portion of the trench.

主权项

1. A semiconductor device, comprising:
a supplementary layer formed over a substrate; a silicon layer formed over the supplementary layer; a trench penetrating the supplementary layer and the silicon layer and formed in the substrate; a gate insulation layer formed along a surface of the trench; a buried gate formed over the gate insulation layer and filling a portion of the trench; and a junction region used as source region and drain region formed in the silicon layer and on both sides of the trench, wherein the junction region is spaced apart from the buried gate by at least a thickness of the supplementary layer, wherein a top surface of the buried gate is disposed below a bottom surface of the supplementary layer.