Diode-based ESD concept for DEMOS protection

摘要

The invention relates to an ESD protection circuit for an integrated circuit including a drain-extended MOS device and an output pad that requires protection. The ESD protection circuit includes a first diode coupled to the output pad and to a bias voltage rail, a second diode coupled to the output pad and to another bias voltage rail, and an ESD power clamp coupled between the two bias voltage rails. The ESD power clamp is formed as a vertical npn transistor with its base and emitter coupled together. The collector of the npn transistor is formed using an n-well implantation and a DEMOS n-drain extension to produce a snapback-based voltage limiting characteristic. The diodes are formed with a lightly p-doped substrate region over a buried n-type layer, and a p-well implant and an n-well implant separated by intervening substrate. A third diode may be coupled between the two bias voltage rails.

主权项

1. A semiconductor circuit comprising an ESD power clamp, the ESD power clamp comprising:
a semiconductor substrate of a first conductivity type; a collector region comprising
a buried layer of a second conductivity type within the semiconductor substrate, the second conductivity type opposite the first conductivity type,a first well of the second conductivity type within the semiconductor substrate, the first well disposed above the buried layer of the second conductivity type,a first highly doped region of the second conductivity type disposed above the first well of the second conductivity type,a lightly doped region of the second conductivity type disposed above the buried layer of the second conductivity type, the lightly doped region of the second conductivity type disposed next to the first well of the second conductivity type; a base region comprising
a well of the first conductivity type adjacent to the lightly doped region of the second conductivity type, the well of the first conductivity type separated from the lightly doped region of the second conductivity type by a first region of the semiconductor substrate having a first width, wherein at least a portion of the first region of the semiconductor substrate is disposed directly above the buried layer of the second conductivity type and the well of the first conductivity type is not disposed directly above the buried layer of the second conductivity type, wherein the first region of the semiconductor substrate forms a contiguous region, anda third highly doped region of the first conductivity type disposed above the well of the first conductivity type; and an emitter region comprising a second highly doped region of the second conductivity type disposed above the first region of the semiconductor substrate.