| 发明名称 | Method for manufacturing a semiconductor device having a channel region in a trench | ||
| 摘要 | A method of manufacturing a semiconductor device includes forming a semiconductor diode by forming a drift region, forming a first semiconductor region of a first conductivity type in or on the drift region and electrically coupling the first semiconductor region to a first terminal via a first surface of a semiconductor body, etching a trench into the semiconductor body, and forming a channel region of a second conductivity type in the trench and electrically coupling the channel region to the first terminal via the first surface of the semiconductor body. A first side of the channel region adjoins the first semiconductor region. | ||
| 申请公布号 | US9048095(B2) | 申请公布日期 | 2015.06.02 |
| 申请号 | US201414470996 | 申请日期 | 2014.08.28 |
| 申请人 | Infineon Technologies AG | 发明人 | Mauder Anton;Hirler Franz;Felsl Hans Peter;Schulze Hans-Joachim |
| 分类号 | H01L21/02;H01L21/302;H01L29/66;H01L29/78;H01L29/861;H01L29/10;H01L29/36;H01L29/423;H01L29/06 | 主分类号 | H01L21/02 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: forming a semiconductor diode, including: forming a drift region;forming a first semiconductor region of a first conductivity type in or on the drift region and electrically coupling the first semiconductor region to a first terminal via a first surface of a semiconductor body;etching a trench into the semiconductor body; andforming a channel region of a second conductivity type in the trench and electrically coupling the channel region to the first terminal via the first surface of the semiconductor body, wherein a first side of the channel region adjoins the first semiconductor region. | ||
| 地址 | Neubiberg DE | ||