Method of etching

摘要

A method is for etching successive substrates on a platen in an inductively coupled plasma chamber in which the etching process results in carbonaceous deposits in the chamber. The method includes (a) interrupting the etching processing of substrates, (b) running an oxygen or oxygen containing plasma within the chamber and removing gaseous by-products, and (c) resuming the etch processing of substrates. The method is characterized in that it further includes the step of running an argon plasma in the chamber after step (b) with the platen biased.

主权项

1. A method comprising a process of etching substrates in succession on a platen in an inductively coupled plasma chamber, the process resulting in carbonaceous deposits in the chamber, and wherein the method includes:
(a) interrupting the process of etching the substrates in succession; (b) while the process is interrupted according to step (a), removing carbonaceous deposits from the chamber by running an oxygen or oxygen containing plasma within the inductively coupled plasma chamber and removing gaseous by-products from the inductively coupled plasma chamber; and (c) subsequently resuming the process of etching the substrates in succession; and (d) running an argon plasma in the inductively coupled plasma chamber during a period after step (b) and before step (c) with the platen biased.