发明名称 Error control in memory storage systems
摘要 A method includes calculating a first syndrome of a codeword read from a memory location under a first set of conditions and calculating a second syndrome of the codeword read from the memory location under a second set of conditions. The method also includes analyzing the first and second syndromes and applying one of the first and second syndromes to the codeword to find the codeword having a minimum number of errors.
申请公布号 US9047191(B2) 申请公布日期 2015.06.02
申请号 US201414151442 申请日期 2014.01.09
申请人 Micron Technology, Inc. 发明人 Bueb Christopher;Eilert Sean
分类号 H03M13/00;G06F11/07;G06F11/10;H03M13/13;H03M13/37 主分类号 H03M13/00
代理机构 Dorsey & Whitney LLP 代理人 Dorsey & Whitney LLP
主权项 1. A method, comprising: detecting an error in a data word striped across a plurality of memory devices; determining which of the plurality of memory devices includes the error; and adjusting an operating parameter of the memory device of the plurality of memory devices including the error by adjusting a read window time, a sense amplifier reference level, or a combination thereof.
地址 Boise ID US
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