发明名称 Projection exposure tool for microlithography and method for microlithographic imaging
摘要 A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.
申请公布号 US9046792(B2) 申请公布日期 2015.06.02
申请号 US201313785707 申请日期 2013.03.05
申请人 Carl Zeiss SMT GmbH 发明人 Hetzler Jochen;Goehnermeier Aksel
分类号 G03F9/00;G01B11/00;G03F7/20;G01B11/14;G01B9/02 主分类号 G03F9/00
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A tool, comprising: a measuring apparatus configured to determine a relative position of measurement structures relative to each other in a lateral direction, wherein: the tool is a microlithography projection exposure tool configured to image mask structures of a first substrate onto a second substrate which is different from the first substrate;the measurement structures are disposed on a surface of the first substrate, or the measurement structures are disposed on a surface of the second substrate; andthe measuring apparatus is configured so that, during use of the measuring apparatus: the measuring apparatus sends measuring light to a diffractive optical element which splits the measuring light into at least two measuring beams with different propagation directions;the at least two measuring beams run back to the diffractive optical element which combines the at least two measuring beams into a combined beam; andthe measuring apparatus simultaneously measures the measurement structures which are laterally offset relative to each other based on the combined beam.
地址 Oberkochen DE