发明名称 |
Projection exposure tool for microlithography and method for microlithographic imaging |
摘要 |
A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another. |
申请公布号 |
US9046792(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201313785707 |
申请日期 |
2013.03.05 |
申请人 |
Carl Zeiss SMT GmbH |
发明人 |
Hetzler Jochen;Goehnermeier Aksel |
分类号 |
G03F9/00;G01B11/00;G03F7/20;G01B11/14;G01B9/02 |
主分类号 |
G03F9/00 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. A tool, comprising:
a measuring apparatus configured to determine a relative position of measurement structures relative to each other in a lateral direction, wherein:
the tool is a microlithography projection exposure tool configured to image mask structures of a first substrate onto a second substrate which is different from the first substrate;the measurement structures are disposed on a surface of the first substrate, or the measurement structures are disposed on a surface of the second substrate; andthe measuring apparatus is configured so that, during use of the measuring apparatus:
the measuring apparatus sends measuring light to a diffractive optical element which splits the measuring light into at least two measuring beams with different propagation directions;the at least two measuring beams run back to the diffractive optical element which combines the at least two measuring beams into a combined beam; andthe measuring apparatus simultaneously measures the measurement structures which are laterally offset relative to each other based on the combined beam. |
地址 |
Oberkochen DE |