Method for peeling group 13 element nitride film

摘要

A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and the group 13 element under nitrogen containing atmosphere. The film 3 of the nitride of the group 13 element includes an inclusion distributed layer 3a in a region distant from an interface 11a of the film 3 of the nitride of the group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a. Laser light A is irradiated from the side of the back face 1b of the seed crystal substrate 11 to peel the single crystal 3 of the nitride of the group 13 element from the seed crystal substrate 11 by laser lift-off method.

主权项

1. A method of peeling a film of a nitride of a group 13 element, said method comprising the step of:
irradiating a laser light to a layered body comprising a seed crystal substrate and a film of a nitride of a group 13 element grown on said seed crystal substrate by flux method from a melt comprising a flux and a group 13 element under nitrogen containing atmosphere, said laser light being irradiated from a side of a back face of said seed crystal substrate to peel said film of said nitride of said group 13 element from said seed crystal substrate, wherein said film comprises an inclusion distributed layer in a region distant by 50 μm or less from an interface of said film of said nitride of said group 13 element on a side of said seed crystal substrate and comprising inclusions derived from components of said melt, and wherein said film comprises an inclusion depleted layer with said inclusion depleted formed on said inclusion distributed layer.