发明名称 |
Methods for wet clean of oxide layers over epitaxial layers |
摘要 |
Methods for an oxide layer over an epitaxial layer. In an embodiment, a method includes forming an epitaxial layer of semiconductor material over a semiconductor substrate; forming an oxide layer over the epitaxial layer; applying a solution including an oxidizer to the oxide layer; and cleaning the oxide layer with a cleaning solution. In another embodiment, a densification process is applied to an oxide layer including treating with thermal energy, UV energy, or both. In an embodiment for a gate-all-around device, the cleaning process is applied to an oxide layer over an epitaxial portion of a fin. Additional methods are disclosed. |
申请公布号 |
US9048087(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201313924193 |
申请日期 |
2013.06.21 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wu Li-Lan;Chen Chi-Yuan;Liu Ming-Chyi;Lo Cary Chia-Chiung;Tsai Teng-Chun;Lin Cheng-Tung;Lin Kuo-Yin;Wang Li-Ting;Pan Wan-Chun;Yen Ming-Liang;Chang Huicheng |
分类号 |
H01L21/336;H01L21/02;H01L29/66;H01L29/775;B82Y10/00;H01L21/3105 |
主分类号 |
H01L21/336 |
代理机构 |
Slater & Matsil, L.L.P |
代理人 |
Slater & Matsil, L.L.P |
主权项 |
1. A method, comprising:
forming an epitaxial layer of semiconductor material over a semiconductor substrate; forming an oxide layer over the epitaxial layer; applying a solution including an oxidizer to the oxide layer; and cleaning the oxide layer with a cleaning solution. |
地址 |
Hsin-Chu TW |