发明名称 Electromechanical microswitch for switching an electrical signal, microelectromechanical system, integrated circuit, and method for producing an integrated circuit
摘要 The invention relates to a microelectromechanical system with an electromechanical microswitch for switching an electrical signal in particular a radio frequency signal, in particular in a GHz range, comprising a multi-level conductive path layer stack arranged on a substrate, wherein conductive paths of the multi-level conductive path layer stack arranged in different conductive levels are insulated from one another through electrically insulating layers and electrically connected with one another through via contacts, an electromechanical switch which is integrated in a recess of the multi-level conductive path layer stack and which includes a contact pivot, an opposite contact and at least one drive electrode for the contact pivot, wherein the contact pivot, the opposite contact and the at least one drive electrode respectively form a portion of a conductive level of the multi-level layer stack.
申请公布号 US9048052(B2) 申请公布日期 2015.06.02
申请号 US201013514106 申请日期 2010.12.07
申请人 IHP GmbH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LIEBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIK 发明人 Kaynak Mehmet;Birkholz Mario;Tillack Bernd;Ehwald Karl-Ernst;Scholz René
分类号 H01L23/48;H01H59/00;H01H1/00 主分类号 H01L23/48
代理机构 Ware, Fressola, Maguire & Barber LLP 代理人 Ware, Fressola, Maguire & Barber LLP
主权项 1. A microelectromechanical system with an electromechanical microswitch for switching an electrical signal in particular a radio frequency signal, in particular in a GHz range, comprising: a multi-level conductive path layer stack arranged on a substrate, wherein conductive paths of the multi-level conductive path layer stack arranged in different conductive levels are insulated from one another through electrically insulating layers and electrically connected with one another through Via contacts, an electromechanical switch which is integrated in a recess of the multi-level conductive path layer stack and which includes a contact pivot, an opposite contact and at least one drive electrode for the contact pivot, wherein the contact pivot, the opposite contact and the at least one drive electrode respectively form a portion of a conductive level of the multi-level layer stack, andwherein the contact pivot of the electromechanical microswitch includes a contact zone and an attractive portion, in particular a partition configured as a slot or similar between the portions,wherein the opposite contact of the electromechanical microswitch includes a base with at least one layer with insulating material and a MIM structure, including: a barrier layer made from conductive material, in particular metal material, oriented towards the base;a conductive cap oriented towards the contact pivot and arranged at a distal end; anda dielectric layer arranged there between.
地址 Frankfurt (Oder) DE