发明名称 |
Gate insulating material, gate insulating film and organic field-effect transistor |
摘要 |
To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.;A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1):
R1mSi(OR2)4-m (1),wherein R1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R1s are present, R1s may be the same or different, R2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R2s are present, R2s may be the same or different, and m represents an integer of 1 to 3,and an epoxy group-containing silane compound represented by the general formula (2):
R3nR4lSi(OR5)4-n-1 (2),wherein R3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R4s are present, R4s may be the same or different, R5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R5s are present, R5s may be the same or different, l represents an integer of 0 to 2, and n represents 1 or 2 (however, l+n≦3). |
申请公布号 |
US9048445(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US200912933417 |
申请日期 |
2009.02.27 |
申请人 |
TORAY INDUSTRIES, INC. |
发明人 |
Murase Seiichiro;Fujiwara Takenori;Jo Yukari;Tsukamoto Jun |
分类号 |
H01L29/78;H01L51/05;C08G59/30;C08G59/32;C08G65/20;C08G77/14;C09D163/00;H01L21/02;H01L21/312;G03F7/075;H01B3/40;H01B3/46;H01L51/00 |
主分类号 |
H01L29/78 |
代理机构 |
Pillsbury Winthrop Shaw Pittman LLP |
代理人 |
Pillsbury Winthrop Shaw Pittman LLP |
主权项 |
1. A gate insulating material comprising a polysiloxane consisting essentially of, as copolymerization components, at least a silane compound represented by the general formula (1):
R1mSi(OR2)4 (1), wherein R1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R1s are present, R1s may be the same or different, R2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R2s are present, R2s may be the same or different, and m represents an integer of 1 to 3, and an epoxy group-containing silane compound represented by the general formula (2):
R3nR41Si(OR5)4-n-1 (2), wherein R3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R4s are present, R4s may be the same or different, R5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R5s are present, R5s may be the same or different, 1 represents an integer of 0 to 2, and n represents 1 or 2 (however, 1+n≦3). |
地址 |
Tokyo JP |