发明名称 |
Mounting method for semiconductor light emitter using resist with openings of different sizes |
摘要 |
The present invention is a method for mounting, on a ceramic substrate (9), an LED chip (1), in which an upper surface of a positive electrode (6) is in a higher position than an upper surface of a negative electrode (5). The method includes the steps of: (i) laminating resist (16) on the negative electrode (5) and the positive electrode (6) and forming openings (16a and 16b) in the resist (16); (ii) forming bumps (11 and 12) in the respective openings (16a and 16b); (iii) removing the resist (16); and (iv) bonding bumps (11 and 12) to the ceramic substrate (9). A cross-sectional area of the opening (16a) is larger than a cross-sectional area of the opening (16b). |
申请公布号 |
US9048407(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201113697766 |
申请日期 |
2011.06.08 |
申请人 |
Sharp Kabushiki Kaisha |
发明人 |
Koyama Yasuhiro;Kawakami Katsuji;Kawasaki Mutsuo;Miyake Osamu;Oda Hajime;Sawai Keiichi |
分类号 |
H01L21/00;H01L33/62;H01L23/00;H01L33/38 |
主分类号 |
H01L21/00 |
代理机构 |
Morrison & Foerster LLP |
代理人 |
Morrison & Foerster LLP |
主权项 |
1. A method for mounting a semiconductor light-emitting element on a substrate via a bump,
the semiconductor light-emitting element including: a first electric-conductivity-type semiconductor layer; a second electric-conductivity-type semiconductor layer laminated on a part of an upper surface of the first electric-conductivity-type semiconductor layer; a first electrode section formed on another part of the upper surface of the first electric-conductivity-type semiconductor layer; and a second electrode section formed on an upper surface of the second electric-conductivity-type semiconductor layer, an upper surface of the second electrode section being in a higher position than an upper surface of the first electrode section with respect to the first electric-conductivity-type semiconductor layer, the method comprising the steps of: (i) laminating resist on the first electrode section and the second electrode section and forming (a) one or more first openings at a part of the resist which part corresponds to the first electrode section and (b) one or more second openings at a part of the resist which part corresponds to the second electrode section; (ii) forming one or more first bumps in the respective one or more first openings and forming one or more second bumps in the respective one or more second openings; (iii) removing the resist; and (iv) bonding the one or more first bumps and the one or more second bumps to the substrate, a cross-sectional area of each of the one or more first openings being larger than a cross-sectional area of each of the one or more second openings, wherein the cross-sectional area of each of the one or more first openings and the cross-sectional area of each of the one or more second openings are selected respectively in accordance with a difference in height between the first electrode section and the second electrode section. |
地址 |
Osaka-shi JP |