Migration and plasma enhanced chemical vapor deposition

摘要

A method of producing a thin film using plasma enhanced chemical vapor deposition, including the steps of supplying a cation species to a substrate region when there is at most a relatively low flux of a plasma based anion species in the substrate region, and supplying the plasma based anion species to the substrate region when there is at most a relatively low flux of the cation species in the substrate region. This enables delivery of gaseous reactants to be separated in time in PECVD and/or RPECVD based film growth systems, which provides a significant reduction in the formation of dust particles for these plasma based film growth techniques.

主权项

1. A plasma processing reactor, comprising:
a substrate holder positioned within a chamber for holding a substrate; a cation species feed to direct a supply of a cation precursor towards the substrate, the cation species feed positioned adjacent to the substrate; an anion species feed to direct a supply of an anion precursor towards a plasma creation region in which a supply of a plasma based anion species can be created as at least part of a plasma; and a hollow cathode positioned between an anode and the cation species feed, the hollow cathode and the anode providing a capacitively coupled configuration, and the plasma creation region is at least partially between the hollow cathode and the anode, wherein, the supply of the cation precursor and the supply of the plasma based anion species to the substrate are intermittently modulated.