发明名称 Laminate, method for producing same, and functional element using same
摘要 Provided is a laminate which includes a transparent conductive film layer that is composed of an oxide thin film mainly composed of titanium oxide and contains an additional element such as niobium, and also contains an anatase phase having more excellent crystallinity and further has high refractive index and low resistivity by forming an optimal buffer layer on the substrate. Also provided are: a semiconductor light emitting element which comprises the laminate; and a functional element such as a solar cell, which includes the laminate.
申请公布号 US9045821(B2) 申请公布日期 2015.06.02
申请号 US201113582571 申请日期 2011.03.01
申请人 Sumitomo Metal Mining Co., Ltd.;Tohoku University 发明人 Chichibu Shigefusa;Hazu Kouji;Nakayama Tokuyuki;Tanaka Akikazu
分类号 H01L31/042;H01L31/0687;H01L31/0216;H01L31/0236;H01L31/054;H01L33/42;B32B15/00;B32B33/00;C23C14/08;H01L31/0224;C23C14/02;C23C14/06;C23C14/34 主分类号 H01L31/042
代理机构 代理人 Hespos Gerald E.;Porco Michael J.;Hespos Matthew T.
主权项 1. A laminate comprising: a substrate; a buffer layer selected from the group consisting of a gallium oxide thin film, a gallium, indium oxide thin film, a gallium, indium, aluminum oxide thin film, a gallium oxynitride thin film, a gallium indium oxynitride thin film, and a gallium indium aluminum oxynitride thin film, formed on the substrate; and a transparent conductive film layer made of an oxide thin film, mainly composed of titanium oxide, containing at least one element selected from the group consisting of niobium, tantalum, molybdenum, arsenic, antimony and tungsten, and consisting of an anatase phase grown by epitaxial growth with twelve-fold symmetry formed on the buffer layer.
地址 Tokyo JP