发明名称 |
Compliant bipolar micro device transfer head with silicon electrodes |
摘要 |
A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes. |
申请公布号 |
US9044926(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201414221071 |
申请日期 |
2014.03.20 |
申请人 |
Luxvue Technology Corporation |
发明人 |
Golda Dariusz;Bibl Andreas |
分类号 |
H01L29/76;B32B38/18;H01L29/06;H01L21/266;B81C99/00;H01L29/40;H01L29/66;H01L29/78;H01L29/872 |
主分类号 |
H01L29/76 |
代理机构 |
Blakely, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakely, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. A bipolar micro device transfer head array comprising:
a base substrate; an array of electrostatic transfer heads, each electrostatic transfer head including a pair of silicon electrodes that is deflectable into a cavity between the base substrate and the pair of silicon electrodes, and a dielectric material covering a top surface of the pair of silicon electrodes. |
地址 |
Santa Clara CA US |