Regenerative building block and diode bridge rectifier and methods

摘要

A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.

主权项

1. A rectifier device comprising:
first and second transistors, each transistor comprising
a gate region;a source region adjacent said gate region;a drain region;a drift region adjacent said drain region;a semiconductor region in the drift region and aligned with an opening of the gate region;a first electrode coupled to the gate region; anda second electrode coupled to the semiconductor region of the drift region, the first electrode and second electrode being configured to control a voltage of the gate region independent of a voltage of the semiconductor region;said second electrode of said first transistor being coupled to the first electrode of the second transistor, and said second electrode of said second transistor being coupled to the first electrode of the first transistor.