发明名称 Semiconductor device, module and system each including the same, and method for manufacturing the semiconductor device
摘要 A barrier for preventing a bridge between adjacent storage node contacts is formed below a bit line located between the bit line contacts, so that a contact region between each storage node contact and an active region is increased in size. The semiconductor device includes a device isolation film defining an active region, a bit line contact coupling the active region to a bit line, and a barrier formed below the bit line located between the bit line contacts.
申请公布号 US9048109(B2) 申请公布日期 2015.06.02
申请号 US201213719037 申请日期 2012.12.18
申请人 SK HYNIX INC. 发明人 Chung In Seung
分类号 H01L29/06;H01L29/423;H01L27/108;H01L21/768 主分类号 H01L29/06
代理机构 代理人
主权项 1. A semiconductor device comprising: a device isolation film defining a first active region and a second active region; a first bit line contact coupling the first active region to a bit line; a second bit line contact coupling the second active region to the bit line; a first storage node contact coupling the first active region to a first storage node; a second storage node contact coupling the second active region to a second storage node; a barrier formed below the bit line and isolating the first storage node contact from the second storage node contact; and a gate that crosses the barrier, wherein the first active region neighbors the second active region in a bit line direction.
地址 Icheon KR