发明名称 |
Semiconductor device, module and system each including the same, and method for manufacturing the semiconductor device |
摘要 |
A barrier for preventing a bridge between adjacent storage node contacts is formed below a bit line located between the bit line contacts, so that a contact region between each storage node contact and an active region is increased in size. The semiconductor device includes a device isolation film defining an active region, a bit line contact coupling the active region to a bit line, and a barrier formed below the bit line located between the bit line contacts. |
申请公布号 |
US9048109(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201213719037 |
申请日期 |
2012.12.18 |
申请人 |
SK HYNIX INC. |
发明人 |
Chung In Seung |
分类号 |
H01L29/06;H01L29/423;H01L27/108;H01L21/768 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a device isolation film defining a first active region and a second active region; a first bit line contact coupling the first active region to a bit line; a second bit line contact coupling the second active region to the bit line; a first storage node contact coupling the first active region to a first storage node; a second storage node contact coupling the second active region to a second storage node; a barrier formed below the bit line and isolating the first storage node contact from the second storage node contact; and a gate that crosses the barrier, wherein the first active region neighbors the second active region in a bit line direction. |
地址 |
Icheon KR |