发明名称 MAMR head adapted for high speed switching
摘要 A microwave-assisted magnetic recording (MAMR) head according to one embodiment includes a main magnetic pole adapted to generate a writing magnetic field when current is applied to a write coil; a trailing shield positioned, at an air bearing surface (ABS), in a trailing direction from the main magnetic pole; and a field generation layer (FGL) positioned, at the ABS, between the main magnetic pole and the trailing shield, wherein either a portion of the main magnetic pole closer to the FGL or a portion of the trailing shield closer to the FGL is adapted to act as a spin polarization layer.
申请公布号 US9047888(B2) 申请公布日期 2015.06.02
申请号 US201213723070 申请日期 2012.12.20
申请人 HGST Netherlands B.V. 发明人 Katada Hiroyuki;Shiimoto Masato
分类号 G11B5/127;G11B5/31;G11B5/00 主分类号 G11B5/127
代理机构 Zilka-Kotab, PC 代理人 Zilka-Kotab, PC
主权项 1. A microwave-assisted magnetic recording (MAMR) head, comprising: a main magnetic pole adapted to generate a writing magnetic field when current is applied to a write coil; a trailing shield positioned, at an air bearing surface (ABS), in a trailing direction from the main magnetic pole; a field generation layer (FGL) positioned, at the ABS, between the main magnetic pole and the trailing shield; and an interlayer positioned, at the ABS, between the main magnetic pole and the FGL, wherein the interlayer comprises a non-magnetic material, and a cap layer positioned, at the ABS, between the FGL and the trailing shield, wherein the cap layer comprises a non-magnetic material, wherein either a portion of the main magnetic pole closer to the FGL or a portion of the trailing shield closer to the FGL is adapted to act as a spin polarization layer, wherein the portion of the main magnetic pole is configured to act as the spin polarization layer, and wherein the portion of the main magnetic pole configured to act as the spin polarization layer is in direct contact with the interlayer and comprises a highly-polarized material.
地址 Amsterdam NL