| 发明名称 | Microlithographic projection exposure apparatus | ||
| 摘要 | A projection exposure apparatus has a projection lens with an object plane, an image plane, an optical axis and a non-telecentric entrance pupil. The apparatus further comprises an illumination system having an intermediate field plane and a field stop. The field stop is positioned in or in close proximity to the intermediate field plane and defines an illuminated field in the object plane that does not contain the optical axis of the projection lens. The illumination system is configured such that, in the object plane, a mean of the angles formed between all principal rays emanating from the intermediate field plane on the one hand and the optical axis of the projection lens on the other hand differs from 0°. | ||
| 申请公布号 | US9046787(B2) | 申请公布日期 | 2015.06.02 |
| 申请号 | US201113007039 | 申请日期 | 2011.01.14 |
| 申请人 | Carl Zeiss SMT GmbH | 发明人 | Gruner Toralf;Epple Alexander;Degünther Markus |
| 分类号 | G03B27/42;G03F7/20 | 主分类号 | G03B27/42 |
| 代理机构 | Fish & Richardson P.C. | 代理人 | Fish & Richardson P.C. |
| 主权项 | 1. A system, comprising: a field stop and a field stop lens comprising: a first lens that images the field stop onto an intermediate image plane; anda second lens that images the intermediate image plane onto an image plane,wherein the system is a microlithographic exposure apparatus illumination system that is configured to illuminate a mask positioned on a mask plane. | ||
| 地址 | Oberkochen DE | ||