Pattern-forming method, and composition for forming resist underlayer film

摘要

Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

主权项

1. A composition for forming a resist underlayer film for use in a method for forming a pattern, comprising:
the resist underlayer film being capable of being removed with an alkali liquid, the composition comprising a compound having an alkali-cleavable functional group, and the alkali-cleavable functional group having a structure that generates a polar group by cleavage in an alkaline aqueous solution, wherein the compound having an alkali-cleavable functional group has crosslinkability and is represented by the following formula (1): wherein, Y1 and Y2 each independently represent a crosslinkable functional group; X represents an alkali-cleavable functional group; R1 represents a linking group having a valency of (n1+1); R2 represents a linking group having a valency of (n2+m); n1 is an integer of 1 to 3; n2 is an integer of 0 to 3; m is an integer of 1 to 3; wherein, n1, m and n2 satisfy the formula of: (n1×m+n2)≧2, and provided that Y1, Y2, X and R1 are each present in plural number, the Y1, Y2, X and R1 present in plural number may be each the same or different.