发明名称 Semiconductor image pickup device
摘要 According to one embodiment, a semiconductor image pickup device includes a pixel area and a non-pixel area. The device includes a first photoelectric conversion element formed in the pixel area, a first transistor formed in the pixel area and connected to the first photoelectric conversion element, a second photoelectric conversion element formed in the non-pixel area, a second transistor formed in the non-pixel area and connected to the second photoelectric conversion element, a metal wire formed at least in the non-pixel area, a first cap layer formed on the metal wire to prevent diffusion of metal contained in the metal wire, and a dummy via wire formed in the non-pixel area and penetrating the first cap layer.
申请公布号 US9048156(B2) 申请公布日期 2015.06.02
申请号 US201113232260 申请日期 2011.09.14
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Koike Hidetoshi
分类号 H01L31/062;H01L27/146 主分类号 H01L31/062
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A semiconductor image pickup device comprising a pixel area including a plurality of pixels arranged in a matrix and a non-pixel area arranged outside the pixel area, the device comprising: a semiconductor substrate; a first photoelectric conversion element formed in the pixel area on the semiconductor substrate; a first transistor formed in the pixel area and connected to the first photoelectric conversion element; a second photoelectric conversion element formed in the non-pixel area on the semiconductor substrate; a second transistor formed in the non-pixel area and connected to the second photoelectric conversion element; a first interlayer insulating film formed on the semiconductor substrate; a metal contact formed through the first interlayer insulating film and in contact with the semiconductor substrate; a metal wire formed on the first interlayer insulating film and connected to the metal contact; a second interlayer insulating film formed on the metal wire; and a dummy via wire formed in the non-pixel area, formed directly above and to face the second photoelectric conversion element in an area of the second photoelectric conversion element, penetrating the second interlayer insulating film, and connected to the metal wire; and a light shielding metal film formed over the dummy via wire and connected to an upper end of the dummy via wire.
地址 Tokyo JP