Nonvolatile semiconductor memory device and method for manufacturing same

摘要

According to one embodiment, a nonvolatile semiconductor memory device includes: first and second stacked bodies, first and second semiconductor pillars, a connection portion, a memory film, and a partitioning insulating layer. The stacked bodes include electrode films stacked along a first axis and an inter-electrode insulating film provided between the electrode films. Through-holes are provided in the stacked bodies. The semiconductor pillars are filled into the through-holes. The connection portion electrically connects the semiconductor pillars. The memory film is provided between the semiconductor pillars and the electrode films. The partitioning insulating layer partitions the first and second electrode films. A side surface of the first through-hole on the partitioning insulating layer side and a side surface of the second through-hole on the partitioning insulating layer side have a portion parallel to a plane orthogonal to a second axis from the first stacked body to the second stacked body.

主权项

1. A method for manufacturing a nonvolatile semiconductor memory device, the device including: a first stacked body including a plurality of first electrode films stacked along a first axis and a first inter-electrode insulating film provided between two of the first electrode films mutually adjacent along the first axis, a first through-hole being provided in the first stacked body to extend along the first axis; a first semiconductor pillar filled into the first through-hole to extend along the first axis; a second stacked body juxtaposed with the first stacked body along a second axis orthogonal to the first axis, the second stacked body including a plurality of second electrode films stacked along the first axis and a second inter-electrode insulating film provided between two of the second electrode films mutually adjacent along the first axis, a second through-hole being provided in the second stacked body to extend along the first axis; a second semiconductor pillar filled into the second through-hole to extend along the first axis; a connection portion electrically connecting the first semiconductor pillar to the second semiconductor pillar; a partitioning insulating layer provided between the first stacked body and the second stacked body to partition the plurality of first electrode films from the plurality of second electrode films; and a memory film provided between the first semiconductor pillar and the plurality of first electrode films and between the second semiconductor pillar and the plurality of second electrode films, the method comprising:
forming the partitioning insulating layer in a stacked main body used to form the first stacked body and the second stacked body; forming a sidewall mask layer on a sidewall of a portion of the partitioning insulating layer; and making the first through-hole and the second through-hole in the stacked main body by using the sidewall mask layer as a portion of a mask.