Nanoporous film patterned by direct photolithography and method for preparing the same

摘要

A nanoporous film patterned by direct photolithography and a method for preparing the same are provided. Since a precursor of the material is the mixture of a nano template material and a photoresist and the mixture still has the basic physical properties of the photoresist, a film is formed on a substrate by a standard photolithography process and a micro-sized patterned structure is realized. The mixture with the patterned structure is chemically etched to remove the template material to form a porous polymer film, or the mixture with the patterned structure is carbonized at a high temperature and then the template material is removed to form a porous carbon film. The nanoporous film patterned by direct photolithography and the method for preparing the same have the advantages of simple operation, low cost and good integration with other micro electric mechanical systems.

主权项

1. A method for preparing a nanoporous film patterned by direct photolithography, wherein the nanoporous film comprises a nanoporous polymer film having a patterned structure or a nanoporous carbon film having a patterned structure, the method comprising the steps of:
a) stirring a photoresist, adding a nano template material to the photoresist under the stirring with a weight ratio between the nano template material and the photoresist of 1:(1-20), adding a solvent to adjust viscosity with a weight ratio between the solvent and the nano template material of (0-10):1 to obtain a mixture, then subjecting the mixture to a mechanical stirring or a magnetic stirring for 1-2 hours and then an ultrasonic agitation for 0.5-2 hours, and repeating the mechanical stirring or the magnetic stirring and the ultrasonic agitation for 3-5 times to obtain an agitated mixture; b) spin coating the agitated mixture on a substrate with a rotating speed of about 200-4000 rpm to form a mixture film on the substrate, and baking the mixture film at a temperature of 80-100° C. for 3-30 minutes; c) exposing the mixture film with a photolithography machine, with an exposure intensity of 60-3000 mJ/cm2, then baking the mixture film at a temperature of 80-100° C. for 3-30 minutes; d) developing the mixture film with a developing solution to form a lithographic pattern on the mixture film, then baking the mixture film having an ichnography pattern corresponding to the lithographic pattern at a temperature of 100-120° C.; and e) etching the mixture film having the ichnography pattern with a hydrofluoric acid solution or a mixed solution of hydrofluoric acid and ethanol with a volume ratio of 1:(1-5) to remove the nano template material to obtain the nanoporous polymer film, or heating the mixture film having the ichnography pattern to a temperature of 600-1500° C. under an inert gas atmosphere of nitrogen or argon or under vacuum, maintaining the temperature for 10-300 minutes to perform carbonization, and etching the mixture film with the hydrofluoric acid solution or the mixed solution of hydrofluoric acid and ethanol after cooling the mixture film to room temperature to remove the nano template material to obtain the nanoporous carbon film.