发明名称 Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
摘要 A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material. A plurality of magnetic tracks is formed over and which angle relative to the alternating regions. Interfaces of immediately adjacent of the regions individually form a domain wall pinning site in individual of the magnetic tracks. Other methods, including memory devices independent of method, are disclosed.
申请公布号 US9048410(B2) 申请公布日期 2015.06.02
申请号 US201313906857 申请日期 2013.05.31
申请人 Micron Technology, Inc. 发明人 Baldi Livio;Mariani Marcello
分类号 H01L43/12;H01L43/02 主分类号 H01L43/12
代理机构 Wells St. John, P.S. 代理人 Wells St. John, P.S.
主权项 1. A method of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls, comprising: forming alternating elevationally outer regions of two different composition materials; removing one of the two different composition materials inwardly to an elevationally outermost location of the one material that is deeper than an elevationally outermost location of the other of the two different composition materials at the end of said removing to form alternating regions of elevational depressions and elevational protrusions; and forming a plurality of magnetic tracks over and which angle relative to the alternating regions, interfaces of immediately adjacent of the regions individually comprising a domain wall pinning site in individual of the magnetic tracks.
地址 Boise ID US