Manufacturing method of non-volatile memory

摘要

A non-volatile memory and a manufacturing method thereof are provided. In this method, a first oxide layer having a protrusion is formed on a substrate. A pair of doped regions is formed in the substrate at two sides of the protrusion. A pair of charge storage spacers is formed on the sidewalls of the protrusion. A second oxide layer is formed on the first oxide layer and the pair of charge storage spacers. A conductive layer is formed on the second oxide layer, wherein the conductive layer is located completely on the top of the pair of charge storage spacers.

主权项

1. A manufacturing method of a non-volatile memory, comprising:
forming a first oxide layer on a substrate, the first oxide layer having a protrusion; forming a pair of doped regions in the substrate at two sides of the protrusion; forming a pair of charge storage spacers on the sidewalls of the protrusion; forming a second oxide layer on the first oxide layer and the pair of charge storage spacers; and forming a gate on the second oxide layer, wherein the gate is located completely above the topmost portion of the pair of charge storage spacers.