发明名称 |
Fabrication of field-effect transistors with atomic layer doping |
摘要 |
Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface. |
申请公布号 |
US9048261(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201113198255 |
申请日期 |
2011.08.04 |
申请人 |
International Business Machines Corporation |
发明人 |
Chan Kevin K.;Kim Young-Hee;Lauer Isaac;Muralidhar Ramachandran;Park Dae-Gyu;Wang Xinhui;Yang Min |
分类号 |
H01L21/44;H01L21/441;H01L29/66;H01L21/225;H01L29/78;H01L29/165 |
主分类号 |
H01L21/44 |
代理机构 |
Tutunjian & Bitetto, P.C. |
代理人 |
Tutunjian & Bitetto, P.C. ;Percello Louis J. |
主权项 |
1. An atomic layer doping method comprising:
preparing a semiconducting surface; preparing a dopant gas mixture; and growing a dopant layer primarily composed of the dopant on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is between 7 Torr and 50 Torr and a temperature that is between 300 ° C. and 750 ° C., wherein the dopant layer includes at least 4×10 20 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface. |
地址 |
Armonk NY US |