Flash memory structure and method of forming the same

摘要

Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a word line cell disposed over the substrate. The semiconductor device further includes a memory gate disposed over the substrate and adjacent to the word line cell and a spacer on a sidewall of the memory gate. The spacer and the word line cell are at opposite sides of the memory gate. In addition, an angle between a top surface of the memory gate and a sidewall of the memory gate is in a range from about 75° to about 90°.

主权项

1. A semiconductor device structure, comprising:
a substrate; a word line cell disposed over the substrate; a memory gate disposed over the substrate and adjacent to the word line cell; a spacer on a sidewall of the memory gate, wherein the spacer and the word line cell are at opposite sides of the memory gate; and a contact formed over the memory gate, wherein the contact further comprises an extending portion extending into the spacer, wherein an angle between a top surface of the memory gate and the sidewall of the memory gate is in a range from about 75° to about 90°.