| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a pillar-shaped silicon layer and a first-conductivity-type diffusion layer in an upper portion of the pillar-shaped silicon layer. A sidewall having a laminated structure including an insulating film and polysilicon resides on an upper sidewall of the pillar-shaped silicon layer. A top of the polysilicon of the sidewall is electrically connected to a top of the first-conductivity-type diffusion layer and has the same conductivity as the diffusion layer. | ||
| 申请公布号 | US9048315(B2) | 申请公布日期 | 2015.06.02 |
| 申请号 | US201414513460 | 申请日期 | 2014.10.14 |
| 申请人 | UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. | 发明人 | Masuoka Fujio;Nakamura Hiroki |
| 分类号 | H01L29/76;H01L29/78;H01L29/66;H01L21/8238;H01L27/092;H01L29/06 | 主分类号 | H01L29/76 |
| 代理机构 | Brinks, Gilson & Lione | 代理人 | Brinks, Gilson & Lione |
| 主权项 | 1. A semiconductor device comprising: a pillar-shaped silicon layer; and a sidewall having a laminated structure comprising an insulating film and polysilicon, the sidewall on an upper sidewall of the pillar-shaped silicon layer, wherein a top of the polysilicon of the sidewall is electrically connected to a top of the pillar-shaped silicon layer. | ||
| 地址 | Peninsula Plaza SG | ||