Method of operating semiconductor device

摘要

A semiconductor device is operated by, inter alia: programming selected memory cells by applying a first program voltage which is increased by a first step voltage to a selected word line and by applying a first pass voltage having a constant level to unselected word lines, and when a voltage difference between the first program voltage and the first pass voltage reaches a predetermined voltage difference, programming the selected memory cells by applying a second program voltage which is increased by a second step voltage lower than the first step voltage to the selected word line and by applying a second pass voltage which is increased in proportion to the second program voltage to first unselected word lines adjacent to the selected word line among the unselected word lines.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
programming memory cells coupled to the selected word line by applying a first program voltage which is increased by a first step voltage to a selected word line and by applying an eleventh pass voltage which has a lower rate of increase in reference to that of the first program voltage to unselected word lines; and when a voltage difference between the first program voltage and the eleventh pass voltage reaches a predetermined voltage difference, programming the selected memory cells by applying a second program voltage which is increased by a second step voltage lower than the first step voltage to the selected word line and by applying a second pass voltage which is increased in proportion to the second program voltage to first unselected word lines adjacent to the selected word line among the unselected word lines.