发明名称 Method for manufacturing pressure sensing device
摘要 According to one embodiment, a method for manufacturing a pressure sensing device includes preparing a sensor unit and a mounting substrate. The sensor unit includes: a membrane body; and an element unit provided on the membrane body. The element unit includes: a first electrode; a second electrode; and a first magnetic layer provided between the first electrode and the second electrode and having magnetization in a first direction. The mounting substrate includes: a base; a first electrode pad provided on the base; and a second electrode pad provided on the base and provided apart from the first electrode pad. The method further includes joining the first electrode pad to the first electrode while heated, and joining the second electrode pad to the second electrode while heated, with an external magnetic field along the first direction applied to the sensor unit.
申请公布号 US9046549(B2) 申请公布日期 2015.06.02
申请号 US201213710718 申请日期 2012.12.11
申请人 Kabushiki Kaisha Toshiba 发明人 Higashi Yoshihiro;Hara Michiko;Fukuzawa Hideaki;Fuji Yoshihiko;Yuasa Hiromi;Nagata Tomohiko
分类号 G01R3/00;G01L9/16;G01L1/12;G01L9/00;A61B5/021 主分类号 G01R3/00
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method for manufacturing a pressure sensing device comprising: preparing a sensor unit and a mounting substrate, the sensor unit including: a membrane body; andan element unit provided on the membrane body, the element unit including: a first electrode; a second electrode; and a first magnetic layer provided between the first electrode and the second electrode and having magnetization in a first direction;the mounting substrate including: a base;a first electrode pad provided on the base; anda second electrode pad provided on the base and provided apart from the first electrode pad; and joining the first electrode pad to the first electrode while heated, and joining the second electrode pad to the second electrode while heated, with an external magnetic field along the first direction applied to the sensor unit.
地址 Tokyo JP