发明名称 Thin film deposition apparatus and thin film deposition method using the same
摘要 In a thin film deposition apparatus and a thin film deposition method using the same, a first spraying unit and a second spraying unit which are separately driven are prepared, the first spraying unit is driven to sequentially spray a first deposition source and an inert gas onto a substrate, a chamber is exhausted to remove, from the chamber, excess first deposition sources that are not adsorbed onto the substrate from the chamber, a second spraying unit is driven to sequentially spray a second deposition source and an inert gas onto the substrate, and the chamber is exhausted to remove, from the chamber, excess second deposition sources that are not adsorbed onto the substrate. When the thin film deposition method is used, the unintended generation of microparticles during deposition is sufficiently suppressed.
申请公布号 US9045826(B2) 申请公布日期 2015.06.02
申请号 US201213613804 申请日期 2012.09.13
申请人 Samsung Display Co., Ltd. 发明人 Seo Sang-Joon;Huh Myung-Soo;Kim Seung-Hun;Kim Jin-Kwang;Jo Cheol-Rae;Jang Choel-Min;Yi Jeong-Ho
分类号 C23C16/455 主分类号 C23C16/455
代理机构 代理人 Bushnell, Esq. Robert E.
主权项 1. A thin film deposition apparatus, comprising: a chamber in which a substrate is placed; a first spraying unit for spraying a first deposition source onto the substrate; and a second spraying unit for spraying a second deposition source onto the substrate; wherein the first spraying unit and the second spraying unit are separately driven in the chamber; and wherein the first spraying unit and the second spraying unit scan the substrate during deposition, and wherein a scanning direction of the first spraying unit and a scanning direction of the second spraying unit run across each other.
地址 Giheung-Gu, Yongin, Gyeonggi-Do KR